fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fair child semiconductor corporation www.fairchildsemi.com 1 fgb3040g2_f085 / fgd3040g2_f085 ecospark ? 2 300mj, 400v, n-chan nel igniti on igbt features ? scis energy = 300mj at t j = 25 o c ? logic level gate dr ive ? qualified to aec q101 ? r ohs compliant applications ? automotive lgni tion coil driver circuits ? coil on plug applications april 2014 fgp3040g2_f085 fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 package gate collector emitter r 2 r 1 symbol jedec to-252aa d-pak d2-pak jedec to-263ab collector (flange) jedec to-220ab e g e g e g c symbol parameter ratings unit s bv cer collector to emitter b r eakdown voltage (i c = 1ma) 400 v bv ecs em itter to collector voltage - reverse battery condition (i c = 10 m a) 28 v e scis25 se lf clamping inductive sw itching energy (note 1) 300 mj e scis150 se lf clamping inductive sw itching energy (note 2) 170 mj i c25 collector curren t continuous, at v ge = 5.0v, t c = 25c 41 a i c110 collector c urren t continuous, at v ge = 5.0v , t c = 110c 25. 6 a v gem gate to emitter v oltage continuous 10 v p d power dissip ation total, at t c = 25c 150 w p ower dissipation derating, for t c > 25 o c1 w / o c t j oper ating jun c tion temperature range - 55 to +175 o c t stg stor age junction t emperature range - 55 to +175 o c t l 300 o c t pkg reflow so lder ing according to jesd020c 260 o c esd hbm-elec tr ostatic discharge voltage at100pf, 1500 4k v cdm-electrostatic discharge voltage at 1 2k v device maximum ratings t a = 25c unless oth erwise noted max. lead te mp. for soldering (leads at 1.6mm from case for 10s)
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fairchild semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 2 electrical ch aracteristics t a = 25c unless otherwise noted off st ate characteristics on state characteristics symb ol param eter test conditions min typ max units bv cer co llect or to emitter breakdown voltage i ce = 2ma, v ge = 0, r ge = 1 k , t j = -40 to 150 o c 370 400 430 v bv ces collect or to emitter breakdown voltage i ce = 10 ma , v ge = 0v , r ge = 0, t j = -40 to 150 o c 3 90 420 450 v bv ecs emitter to collector breakdown v olt age i ce = - 20ma, v ge = 0v , t j = 25c 28 - - v bv ges gate to emitter b reakdown voltage i ges = 2ma 12 14 - v i cer co llect or to emitter leakage current v ce = 250v, r ge = 1k ? t j = 25 o c- - 25 a t j = 150 o c- - 1 m a i ecs emitter to collector le akage current v ec = 24v, t j = 25 o c -- 1 ma t j = 150 o c- - 40 r 1 ser i es gate resistance - 120 - r 2 gate to emitter resist ance 10k - 30k v ce(s at) collector t o emitter saturation v oltage i ce = 6a, v ge = 4 v, t j = 2 5 o c - 1 . 1 5 1 . 2 5 v v ce( s at) collector t o emitter saturation v oltage i ce = 1 0 a, v ge = 4.5v , t j = 150 o c - 1.35 1.50 v v ce( s at) collector t o emitter saturation v oltage i ce = 15a, v ge = 4 . 5 v, t j = 150 o c - 1.68 1.85 v e sci s self c l amped inductive switching l = 3.0 mhy,r g = 1k ? , v ge = 5v, (note 1) t j = 25c - - 300 mj p ackage marking and o rdering information d e vice marking device package reel size tape width quantity fgb3040g2 fgb3040g2_f085 to-263ab 330m m 16mm 2500 fgd3040g2_f085 to-252aa 330mm 24mm 800 fgp3040g2_f085 to-220ab tube n/a 50 fgd3040g2 fgp3040g2 t hermal characteristics notes: 1 : self clamping induct ive switching energy (e scis2 5 ) o f 300 mj is based on the test conditions that starting tj=25 o c ; l=3mhy, i scis =1 4.2a,v cc = 100v during inductor charging and v cc =0v during the time in clamp . 2: self clamping inductive switching energy (e scis15 0 ) of 170 mj is based on the test conditions that starting tj=150 o c; l= 3mhy, i sc is = 10.8a,v cc =10 0v during inductor charging and v cc = 0v during the time in clamp . r jc th ermal resistance junction to case - - 1 o c/w
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fair child semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 3 electrical characteristics t a = 25 c unless otherwise noted dynamic characteristi cs switching characteristics symbol param eter t est conditions min typ max units q g(on) gate charge i ce = 10 a , v ce = 12v, v ge = 5v -21 - nc v ge(t h) gate to emitter threshold v o ltage i ce = 1m a, v ce = v ge, t j = 25 o c 1.3 1.7 2.2 v t j = 150 o c 0.75 1.2 1.8 v gep gate to emitter plat eau voltage v ce = 12v, i ce = 1 0 a - 2 . 8 - v t d(on)r current t u rn-on delay time-resistive v ce = 14v, r l = 1 v ge = 5v, r g = 1k t j = 25 o c, -0 . 9 4 s t rr current rise t i me-resistive - 1.9 7 s t d(off)l current t u rn-off delay time-inductive v ce = 300v, l = 1mh, v ge = 5v, r g = 1k i ce = 6.5a, t j = 25 o c, - 4.8 15 s t fl current fa ll t ime-inductive - 2.0 15 s
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fair child semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 4 typical performance curves figu re 1. self clamped inductive switching current vs. time in clamp 1 10 10 0 10 00 1 10 100 sc i s curves valid for v clam p vo lt ages of <430v t j = 150 o c t j = 25 o c t clp , t im e in clamp ( s ) i scis , in du ctive switching current (a) r g = 1k , v ge = 5v, v ce = 100v figure 2. 036912 15 0 5 10 15 20 25 30 35 40 45 sc is curves valid for v cla m p vo lt ages of <430v t j = 150 o c t j = 2 5 o c l, inducta nce (mhy) i sci s , inductiv e sw itching current (a) r g = 1k , v ge = 5 v, v ce = 1 00v self clamped in ductive switching current vs. inductance figure 3. -75 - 5 0 -25 0 25 50 75 100 125 150 175 1.00 1.05 1.10 1.15 1.20 i ce = 6a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4. 0v v ge = 3. 7v v ce , collec t or to emitter voltage (v) t j , juncti on temperture ( o c ) collector to emitte r on-state voltage vs. ju nc tion temperature figure 4. -75 - 50 -25 0 25 50 75 100 125 150 175 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 i ce = 10 a v ge = 8 v v ge = 5 v v ge = 4.5v v ge = 4. 0v v ge = 3 . 7v v ce , collec t or to emitter voltage (v) t j , j uncti on temperture ( o c ) collector to e m itte r on-state voltage vs. junction temperature figure 5. 0123 4 0 10 20 30 t j = - 4 0 o c v ge = 4. 5v v ge = 5. 0v v ge = 3. 7v v ge = 4. 0 v v ge = 8. 0v v ce , co l lector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collecto r current figure 6. collector to emitter on-state voltage vs. collector current 0123 4 0 10 20 30 t j = 25 o c v ge = 4. 5v v ge = 5. 0v v ge = 3. 7v v ge = 4. 0 v v ge = 8. 0v v ce , co l lector to emitter voltage (v) i ce , collector to emitter current (a)
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fairchild semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 5 figure 7. 01234 0 10 20 30 t j = 175 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 8. 1.01.52.02.53.03.54.04.5 0 10 20 30 t j = -40 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v ce = 5v i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) transfer characteristics figure 9. 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 i ce , dc collector current (a) t c , case temperature( o c) v ge = 5.0v dc collector current vs. case temperature figure 10. gate charge 0 102030405060 0 2 4 6 8 10 i ce = 10a, t j = 25 o c v ce = 6v v gs , gate to emitter voltage(v) q g , gate charge(nc) v ce = 12v figure 11. -50 -25 0 25 50 75 100 125 150 175 1.0 1.2 1.4 1.6 1.8 2.0 v ce = v ge i ce = 1m a v th , threshold voltage (v) t j , junction temperature ( o c ) threshold voltage vs. junction temperature figure 12. leakage current vs. junction tempe rature -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 v ces = 250v v ces = 300v v ecs = 24v t j , junction temperature ( o c ) leakage current ( a ) typical performance curves (continued)
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fairchild semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 6 figure 13. 25 50 75 100 125 150 175 0 2 4 6 8 10 12 resistive t on inductive t off resistive t off switching time ( s ) t j , junction temperature ( o c ) i ce = 6.5a, v ge = 5v, r g = 1k switching time vs. junction temperature figure 14. 5 10152025 0 400 800 1200 1600 2000 f = 1mhz v ge = 0v c res c oes c ies v ds , drain to source voltage ( v ) capacitance (pf) capacitance vs. coll ector to emitter voltage figure 15. break down voltage vs. series gate resistance 10 100 1000 6000 380 390 400 410 420 430 t j = 25 o c t j = -40 o c t j = 175 o c i cer = 10ma r g , series gate resistance ( ) bv cer , breakdown voltage (v) figure 16. 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 0.01 0.1 1 2 0.01 0.02 0.05 0.10 single pulse normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 0.20 d = 0.5 igbt normalized transient thermal impedance, junction to case typical performance curves (continued)
fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fairch ild semicon ductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 7 figure 1 7 . forward safe operating area typical performance curves *for s i ngle non repetitive ar d pul v ce , collector to e m itter voltage (v) i ce , colle c tor to emitter current (a) 500 100 10 1 1 10 100 0.1 *for single non repetitive pulse operation tj=175 c tc=25 c vge=5.0v rev. 2.1 operation in this area is limited by vce(on) or transconductance 10us 100us 1ms 10ms dc & 100ms *operation in this area is permitted during scis pulse operation *
test circu i t and waveforms figure 1 8 . inductive switching test circuit figure 19. t on and t off switc h ing test circuit figure 20. energy test circuit figure 21. energy waveforms r g g c e v cc l pul s e gen dut r g = 1 k ? + - v cc dut 5v c g e lo ad r or l t p v ge 0.01 ? l i scis + - v ce v cc r g vary t p to obtain required peak i scis 0v dut g c e v cc v ce bv ces t p i scis t av 0 fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 @2014 fair child semiconductor corporation fgb3040g2_f085 / fgd3040g2_f085 / fgp3040g2_f085 rev.c3 www.fairchildsemi.com 8
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